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FDMC2523P P-Channel QFET(R)
January 2007
FDMC2523P P-Channel QFET(R)
-150V, -3A, 1.5 Features
Max rDS(on) = 1.5 at VGS = -10V, ID = -1.5A Low Crss ( typical 10pF) Fast Switching Low gate charge ( typical 6.2 nC ) Improved dv / dt capability RoHS Compliant
tm
General Description
These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Application
Active Clamp Switch
Bottom
Top
5
6
7
8 D 1 D
D
D
D D D
5 6 7 8
4 3 2 1
G S S S
4
3
2
S
S
S
G
D
Power 33
MOSFET Maximum Ratings TA = 25C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG TL dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Power Dissipation (Steady State) TC = 25C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Peak Diode Recovery dv/dt (Note 2) TC = 25C TC = 100C Ratings -150 30 -3 -1.8 -12 42 -55 to +150 300 -5 W C C V/ns A Units V V
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 3.0 60 C/W
Package Marking and Ordering Information
Device Marking FDMC2523P Device FDMC2523P Package Power 33 Reel Size 7'' Tape Width 8mm Quantity 3000 units
(c)2006 Fairchild Semiconductor Corporation FDMC2523P Rev.C
1
www.fairchildsemi.com
FDMC2523P P-Channel QFET(R)
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -150V, VGS = 0V TJ = 125C VGS = 30V, VDS = 0V -150 -138 -1 -10 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -1.5A VGS = -10V, ID = -1.5A , TJ = 125C VDS = -40V, ID = -1.5A (Note 4) -3 -3.8 6 1.1 2.0 1.4 1.5 3.6 S -5 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -25V, VGS = 0V, f = 1MHz f = 1MHz 200 60 10 7.5 270 80 15 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = -10V VDD = -75V ID = -3A (Note 3,4) VDD = -75V, ID = -3A VGS = -10V, RGEN = 25 (Note 3,4) 15 11 19 13 6.2 1.4 3.3 27 20 35 24 9 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum continuous Drain - Source Diode Forward Current Maximum Pulse Drain - Source Doide Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -3.0A IF = -3.0A, di/dt = 100A/s (Note 3) -1.8 93 0.27 -3 -12 -5 A A V ns nC
Notes: 1: RJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a. 60C/W when mounted on a 1 in2 pad of 2 oz copper
b.135C/W when mounted on a minimum pad of 2 oz copper
2: ISD < -3A, dI/dt < 300A/us, VDD < BVDSS, Starting TJ = 25C 3: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 4: Essentially independent of operating temperature.
FDMC2523P Rev.C
2
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FDMC2523P P-Channel QFET(R)
Typical Characteristics TJ = 25C unless otherwise noted
3.0
VGS = -10V
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = -8V VGS = -7V VGS = -9V
- ID, DRAIN CURRENT (A)
2.5 2.0 1.5 1.0 0.5 0.0 0
VGS = -6V
PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX
1.4
1.2
VGS = -7V VGS = -9V
VGS = -8V
VGS = -6V
1.0
VGS = -10V
2 4 6 8 -VDS, DRAIN TO SOURCE VOLTAGE (V)
10
0.8 0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
4.0
rDS(on), DRAIN TO SOURCE ON-RESISTANCE ()
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
2.1 1.8 1.5 1.2 0.9 0.6 0.3 -50
ID = -3A VGS = -10V
3.5 3.0 2.5 2.0 1.5 1.0
PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX
ID = -0.75A
TJ = 125oC
TJ = 25oC
-25
0
25
50
75
100
125
150
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
- IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
10
VGS = 0V
3.0 - ID, DRAIN CURRENT (A) 2.5 2.0 1.5 1.0 0.5
TJ = -55oC TJ = 125oC TJ = 25oC
PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX
1
TJ = 125oC
VDD = -5V
0.1 0.01 1E-3 1E-4 0.0
TJ = 25oC
TJ = -55oC
0.0 2 3 4 5 6 7 -VGS, GATE TO SOURCE VOLTAGE (V) 8
0.5 1.0 1.5 2.0 -VSD, BODY DIODE FORWARD VOLTAGE (V)
2.5
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMC2523P Rev.C
3
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FDMC2523P P-Channel QFET(R)
Typical Characteristics TJ = 25C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE(V)
10
ID = -3A VDD = -50V VDD = -75V
1000
Ciss
8 6 4 2 0 0 2
CAPACITANCE (pF)
VDD = -100V
100
Coss
10
Crss
f = 1MHz VGS = 0V
4 6 Qg, GATE CHARGE(nC)
8
1 0 25 50 75 100 125 150
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
40
IAS, AVALANCHE CURRENT(A)
6
ID, DRAIN CURRENT (A)
10
TJ = 25oC
rDS(on) LIMITED
100us
1
1ms 10ms
0.1
SINGLE PULSE TJ = MAX RATED RJA = 135 C/W
o
100ms 1s 10s DC
1
TJ = 125oC
0.01
0.5 -2 10
TA = 25oC
10
-1
10
0
10
1
20
1E-3 1 10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
400
tAV, TIME IN AVALANCHE(s)
Figure 9. Unclamped Inductive Switching Capability
500
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Forward Bias Safe Operating Area
100
TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - T A ----------------------125
10
I = I25
SINGLE PULSE
1
0.5 -4 10
RJA = 135 C/W
o
10
-3
10
-2
10 t, PULSE WIDTH (s)
-1
10
0
10
1
10
2
10
3
Figure 11. Single Pulse Maximum Power Dissipation
FDMC2523P Rev.C
4
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FDMC2523P P-Channel QFET(R)
Typical Characteristics TJ = 25C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01
0.1
PDM
0.01
SINGLE PULSE RJA = 135 C/W
o
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
-1 0 1 2 3
1E-3 -4 10
10
-3
10
-2
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
FDMC2523P Rev.C
5
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FDMC2523P P-Channel QFET(R)
www.fairchildsemi.com
FDMC2523P Rev.C
6
FDMC2523P P-Channel QFET(R)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I22 FDMC2523P Rev. C 7 www.fairchildsemi.com

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